OST Photonics supply all types of single crystal materials and substrates for researchers and industries, the table below lists the materials we can supply.
Type | High Temperature Superconducting(HTS) Thin Film Substrate | Magnetic and Ferroelectricity Thin Film Substrate | GaN Epitaxial Thin Film Substrate | Semiconductor Substrate | Halide Crystal Substrate |
Material | LaAlO3, LSAT, SrTiO3, MgO, YSZ, KTaO3, SrLaAlO4, YAlO3, MgAl2O4 | LaAlO3, LSAT, SrTiO3, Nb:SrTiO3, Fe:SrTiO3, Nd:SrTiO3, Al2O3, MgAl2O4, GGG, TiO2, TGG | Si, Ge, GaAs, InP, InAs, GaSb | NaCl, KCl, KBr |
(1) High Temperature Superconducting(HTS) Thin Film Substrate
Material | Structure | Orientation | Melting Point | Density | Hardness | Index of Refraction | Thermal Expansion Coefficient (/K) | Dielectric Constants | Maximum Size | Typical Size |
≈Cubic a=3.821Å | <100> <110> <111> | 2100℃ | 6.52 g/cm3 | 6.5 Mohs | 1.80 | 9.2 x 10^-6 | 24.5 | Φ3″ | Φ3″ x 0.5 mm Φ2″ x 0.5 mm 10 x 10 x 0.5 mm | |
LSAT (LaAlO3)0.3 | Cubic a=3.868Å | <100> <110> <111> | 1840℃ | 6.74 g/cm3 | 6.5 Mohs | 10 x 10^-6 | 22 | Φ2″ | Φ2″ x 0.5 mm 10 x 10 x 0.5 mm | |
Cubic a=3.90Å | <100> <110> <111> | 2050℃ | 5.175 g/cm3 | 6 Mohs | 2.409 | 10.4 x 10^-6 | 300 | Φ30 mm | 10 x 10 x 0.5 mm 10 x 5 x 0.5 mm | |
Cubic a=4.216Å | <100> <110> <111> | 2852℃ | 3.58 g/cm3 | 5.5~6 Mohs | 1.58 | 12.8 x 10^-6 | 9.80 | 50 x 50 mm | Φ2″ x 0.5 mm 10 x 10 x 0.5 mm | |
YSZ | Cubic c=5.125Å | <100> <110> <111> | 2500℃ | 5.80 g/cm3 | 7 Mohs | 1.96 | 10.3 x 10^-6 | 27 | Φ2″ | Φ2″ x 0.5 mm 10 x 10 x 0.5 mm |
KTaO3 | Cubic a=3.984Å | <100> <110> <111> | 1352℃ | 7.03 g/cm3 | 6 Mohs | 2.00 | 4.03 x 10^-6 | 20 x 20 mm | 20 x 20 x 0.5 mm 10 x 10 x 0.5 mm 10 x 5 x 0.5 mm | |
SrLaAlO4 | M4 a=3.756Å c=12.63Å | <001> | 1650℃ | 5.92 g/cm3 | 6 Mohs | <100> 10.05 x 10^-6 <001> 18.9 x 10^-6 | 16.8 | Φ20 mm | 10 x 10 x 0.5 mm 10 x 5 x 0.5 mm | |
YAlO3 | Orthorhombic a=5.1796Å b=5.3286Å c=7.3706Å | <100> <010> <001> | 1870℃ | 5.37 g/cm3 | 8.5 Mohs | 4.2 x 10^-6//a 11.7 x 10^-6//b 5.1 x 10^-6//c | Φ30 mm | 10 x 10 x 0.5 mm Φ30 x 0.5 mm | ||
Cubic a=8.083Å | <100> <110> <111> | 2130℃ | 3.60 g/cm3 | 7.5~8 Mohs | 1.71 | 9.65 | Φ2″ | Φ2″ x 0.5 mm 10 x 10 x 0.5 mm |
(2) Magnetic and Ferroelectricity Thin Film Substrate
Material | Structure | Orientation | Melting Point | Density | Hardness | Index of Refraction | Thermal Expansion Coefficient (/K) | Dielectric Constants | Maximum Size | Typical Size |
≈Cubic a=3.821Å | <100> <110> <111> | 2100℃ | 6.52 g/cm3 | 6.5 Mohs | 1.80 | 9.2 x 10^-6 | 24.5 | Φ3″ | Φ3″ x 0.5 mm Φ2″ x 0.5 mm 10 x 10 x 0.5 mm | |
LSAT (LaAlO3)0.3 | Cubic a=3.868Å | <100> <110> <111> | 1840℃ | 6.74 g/cm3 | 6.5 Mohs | 10 x 10^-6 | 22 | Φ2″ | Φ2″ x 0.5 mm 10 x 10 x 0.5 mm | |
Cubic a=3.90Å | <100> <110> <111> | 2050℃ | 5.175 g/cm3 | 6 Mohs | 2.409 | 10.4 x 10^-6 | 300 | Φ30 mm | 10 x 10 x 0.5 mm 10 x 5 x 0.5 mm | |
Nb:SrTiO3 Fe:SrTiO3 Nd:SrTiO3 | Cubic a=3.90Å | <100> <110> <111> | 2050℃ | 5.175 g/cm3 | 6 Mohs | 2.409 | 10.4 x 10^-6 | 300 | Φ30 mm | 10 x 10 x 0.5 mm 10 x 5 x 0.5 mm |
M6 a=4.758Å c=12.99Å | <0001> <11-20> <10-10> <1-102> | 2040℃ | 3.97 g/cm3 | 9 Mohs | 1.77 | 7.50 x 10^-6 | 9.4@A-axis 11.58@C-axis | Φ180 mm | Φ50.8 x 0.5 mm Φ100 x 0.5 mm 10 x 10 x 0.5 mm | |
Cubic a=8.083Å | <100> <110> <111> | 2130℃ | 3.60 g/cm3 | 7.5~8 Mohs | 1.71 | 7.45 x 10^-6 | Φ2″ | Φ2″ x 0.5 mm 10 x 10 x 0.5 mm | ||
Cubic a=12.37Å | <100> <110> <111> | 1860℃ | 7.05 g/cm3 | 6~7 Mohs | 1.95 | Φ2″ | Φ2″ x 0.5 mm 10 x 10 x 0.5 mm | |||
TiO2 | M4 a=4.593Å c=2.958Å | <100> <001> <110> <111> | 1840℃ | 4.26 g/cm3 | 7 Mohs | 2.72 | Φ23~25 mm | 10 x 10 x 0.5 mm 10 x 5 x 0.5 mm | ||
TGG | Cubic a=12.355 Å | <100> <110> <111> | 1725℃ | 7.13 g/cm3 | 8 Mohs | 1.954 | Φ30 mm | Φ30 x 0.5 mm 10 x 10 x 0.5 mm 5 x 5 x 10 mm |
(3) GaN Epitaxial Thin Film Substrate
Material | Structure | Orientation | Melting Point | Density | Hardness | Thermal Expansion Coefficient (/K) | Lattice Mismatch for GaN | Maximum Size | Typical Size |
M6 a=4.758Å c=12.99Å | <0001> <11-20> <10-10> <1-102> | 2040℃ | 3.97 g/cm3 | 9 Mohs | 7.50 x 10^-6 | 16.1%@<0001> | Φ180 mm | Φ50.8 x 0.5 mm Φ100 x 0.5 mm 10 x 10 x 0.5 mm | |
Si | Cubic a=5.0430Å | <100> <110> <111> | 1415℃ | 2.33 g/cm3 | 5.5~6 Mohs | 2.59 x 10^-6 | 20.5%@<111> | 50 x 50 mm | Φ2″ x 0.5 mm 10 x 10 x 0.5 mm |
GaAs | Cubic a=5.653Å | <100> | 1238℃ | 5.31 g/cm3 | 6.5 Mohs | 5.75 x 10^-6 | 19.9%@<111> | Φ4″ | Φ4″ x 0.625mm Φ2″ x 0.35mm |
LiAlO2 | M4 a=5.17Å c=6.26Å | <100> <001> <110> <111> | 1900℃ | 2.62 g/cm3 | 7.5 Mohs | 7.1 x 10^-6 | 1.4%@<100> | Φ2″ | Φ2″ x 0.5 mm 10 x 10 x 0.5 mm |
Cubic a=8.083Å | <100> <110> <111> | 2130℃ | 3.60 g/cm3 | 7.5~8 Mohs | 7.45 x 10^-6 | 9%@<111> | Φ2″ | Φ2″ x 0.5 mm 10 x 10 x 0.5 mm | |
SiC | M6 a=3.080Å c=15.12Å | <0001> <11-20> <10-10> | 2830℃ | 3.217 g/cm3 | 9.2 Mohs | 4.2 x 10^-6@c | 3.5%@<0001> | Φ4″ | Φ2″ x 0.33 mm 10 x 10 x 0.33 mm |
ZnO | M6 a=3.325Å c=5.213Å | <0001> <11-20> <10-10> | 1975℃ | 5.605 g/cm3 | 4.5 Mohs | 2.92 x 10^-6@c | 2.0%@<0001> | Φ25 mm | 10 x 10 x 0.5 mm 20 x 20 x 0.5 mm |
GaN | M6 a=0.3189Å c=0.5186Å | <0001> | 1700℃ | 6.1 g/cm3 | 8 Mohs | 3.17 x 10^-6@c 5.59 x 10^-6@a | 0%@<0001> | Φ2″ | Φ2″ x 0.3 mm 10 x 10 x 0.3 mm |
(4) Semiconductor Substrate
Material | Structure | Orientation | Melting Point | Density | Band Gap | Conductivity Type | Dopant | Resistivity | Maximum Size | Typical Size |
Si | Cubic a=5.0430Å | <100> <110> <111> | 1415℃ | 2.33 g/cm3 | 1.124 ev | N or P | undoped | >1000 Ώ.cm | Φ6″ | Φ2″ x 0.5 mm Φ3″ x 0.5 mm Φ4″ x 0.5 mm |
N | P | 0.001~40 Ώ.cm | ||||||||
P | B | 100~10000 Ώ.cm | ||||||||
Ge | Cubic a=5.6575Å | <100> <110> <111> | 937.4℃ | 5.323 g/cm3 | 0.66 ev | / | undoped | >30 Ώ.cm | Φ4″ | Φ2″ x 0.5 mm Φ3″ x 0.5 mm Φ4″ x 0.5 mm |
N | Sb | 0.01~30 Ώ.cm | ||||||||
P | In or Ga | 0.01~30 Ώ.cm | ||||||||
GaAs | Cubic a=5.653Å | <100> | 1238℃ | 5.31 g/cm3 | 1.424 ev | N | undoped | >10^7 Ώ.cm | Φ4″ | Φ2″ x 0.35 mm Φ4″ x 0.625 mm |
Si | <0.1 Ώ.cm | |||||||||
InP | Cubic a=5.869Å | <100> | 1600℃ | 4.79 g/cm3 | 1.344 ev | N | undoped | Φ3″ | Φ2″ x 0.5 mm Φ3″ x 0.5 mm | |
S or Fe | ||||||||||
P | Zn | |||||||||
InAs | Cubic a=6.058Å | <100> | 942℃ | 5.66 g/cm3 | 0.45 ev | N | undoped | Φ3″ | Φ2″ x 0.5 mm Φ3″ x 0.5 mm | |
S or Sn | ||||||||||
P | Zn | |||||||||
GaSb | Cubic a=6.094Å | <100> | 712℃ | 5.53 g/cm3 | 0.67 ev | P | undoped | Φ3″ | Φ2″ x 0.5 mm Φ3″ x 0.5 mm | |
Zn | ||||||||||
N | Te |
(5) Halide Crystal Substrate
Material | Structure | Orientation | Melting Point | Density | Transmission Range | Typical Size |
NaCl | Cubic a=5.642Å | <100> <110> <111> | 804℃ | 2.16 g/cm3 | 0.26~22 um | 10 x 10 x 2.0 mm 20 x 20 x 2.0 mm |
KCl | Cubic a=6.291Å | <100> <110> <111> | 770℃ | 1.98 g/cm3 | 0.20~27.5 um | 10 x 10 x 2.0 mm 20 x 20 x 2.0 mm |
KBr | Cubic a=5.596Å | <100> <110> <111> | 734℃ | 2.75 g/cm3 | 0.20~34 um | 10 x 10 x 2.0 mm 20 x 20 x 2.0 mm |