LaAlO3 Substrate
LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors , magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.
Features
1 ) Good lattice match to most materials with Perovskite structure
2 ) Low dielectric constant
3 ) Low microwave loss
Applications
1 ) High Tc superconductors , magnetic and ferro-electric thin films
2 ) Low loss microwave applications
3 ) Dielectric resonance applications
Specifications
Materials | LaAlO3 |
Orientation | [100] or [110] or [111] < ±0.5° |
Surface Finish | Single side polished (SSP) or Double sides polished (DSP) |
Polished Side Roughness | < 0.5 nm |
Typical Size | 10 x 10 x 0.5 mm, φ50.8 x 0.5 mm, φ76.2 x 0.5 mm etc. |
Dimension Tolerance | ±0.1 mm or better |
Thickness Tolerance | ±0.05 mm or better |
Maximum Size | Diameter 3 inches |
Properties
Chemical Formula | LaAlO3 | |
Crystal Structure | M6 (normal temperature) | M3 (>435℃) |
Lattice Parameters | a = 5.357 Å c =13.22 Å | a = 3.821 Å |
Melting Point | 2100 ℃ | |
Density | 6.52 g/cm3 | |
Hardness | 6.5 Mohs | |
Thermal Expansion Coefficient(/ ℃) | 9.2 × 10^-6 | |
Tangent Loss | ~3 × 10^-4 (300k) ~0.6 × 10^-4 (77k) | |
Dielectric Constants | 24.5 | |
Color and Appearance | Depending on anneal and condition, differ from brown to brownish | |
Chemical Stability | Insoluble in mineral acids at room temperature, soluble in h3po4 when the temperature greater than 150℃ | |