Ti:Sapphire Laser Crystals
Titanium doped Sapphire (Ti:Sapphire) is the most widely used laser crystal for widely tunable and ultrashort pulsed lasers with high gain and high power outputs. The Ti:Sapphire crystals is grown by the method of Temperature Gradient Technique (TGT), the large-sized (Dia.30x 30mm) Ti:Sapphire crystal in high quality free of light scatter, with the dislocation density less than 102cm-2 could be provided. The TGT grown sapphire crystal is characterized by the (0001) oriented growth, high doping level (a490= 4.0cm-1), high gain and laser damage threshold.
Advantages
1 ) Femtosecond pulse laser material
2 ) Coordinated output wavelength range : 650~1100nm
3 ) High efficiency
Specifications
Material | Ti:Sapphire |
Dopant Concentration | 0.06 – 0.26at % |
Orientation | A-Axis within 5° |
Dimension | Diameter:2-30mm, Length:2-30mm(upon customer’s request) |
Diameter Tolerance | +/-0.1mm |
Length Tolerance | +/-0.1mm |
Wavefront Distortion | <λ/8 per inch@632.8nm |
Chamfer | <0.2@45° |
Wavefront Distortion | λ/8 @632nm |
Clear Aperture | >90% |
Flatness | λ/8 per inch@632.8nm |
Scratch/Dig | 10-5 @MIL-0-13830A |
Perpendicularity | ≤15 arc minutes |
Parallelism | <10 arc seconds |
Anti-Reflection Coating | R<5.0%@532nm per surface; R<0.5%@650~850nm per surface |
Properties
Chemical Formula | Ti3+: Al2O3 |
Crystal Structure | Hexagonal |
Lattice Constants | a=4.758, c=12.991 |
Density | 3.98 g/cm3 |
Melting Point | 2040℃ |
Mohs Hardness | 9 |
Thermal Conductivity | 52 W/m/k |
Specific Heat | 0.42 J/g/k |
Laser Action | 4-Level Vibronic |
Fluorescence Lifetime | 3.2μs (T=300K) |
Tuning Range | 660 – 1050 nm |
Absorbtion Range | 400 – 600 nm |
Emission Peak | 795 nm |
Absorption Peak | 488 nm |
Refractive Index | 1.76 @ 800 nm |
Peak Cross-Section | 3-4×10-19cm2 |
Thermal Expansion | 8.40×10-6/℃ |